Effect of laser wavelength for surface morphology of aluminum nitride thin films by nitrogen radical-assisted pulsed laser deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 4 A, 2001, Pages 2413-2416

  Ishihara, M ^a   Yamamoto, K ^a   Kokai, F ^b   Koga, Y ^a  

^a NATL INST OF MAT AND CHEM RES   (Japan)

^b University of Tsukuba   (Japan)

Author keywords

AlN; C axis orientation; Nitrogen radical; Pulsed laser deposition; Surface acoustic wave device; Surface roughness

Indexed keywords

ALUMINUM NITRIDE; CRYSTALS; PULSED LASER DEPOSITION; STOICHIOMETRY; SUBSTRATES; SURFACE ROUGHNESS; X RAY DIFFRACTION ANALYSIS;

LASER WAVELENGTH;

THIN FILMS;

EID: 0035302233     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.2413     Document Type: Article

References (16)