Deposition of aluminum nitride thin films by MOCVD from the trimethylaluminum-ammonia adduct

Chemical Vapor Deposition

Volumn 2, Issue 1, 1996, Pages 5-8

  Jones, Anthony C ^a   Rushworth, Simon A ^a   Houlton, David J ^a   Roberts, John S ^a   Roberts, Victoria ^a   Whitehouse, Colin R ^a   Critchlow, Gary W ^a  

^a Epichem Ltd   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; AMMONIA; AUGER ELECTRON SPECTROSCOPY; CARBON; CONTAMINATION; CRYSTAL ATOMIC STRUCTURE; EPITAXIAL GROWTH; OXYGEN; POLYCRYSTALLINE MATERIALS; PYROLYSIS; REACTION KINETICS; THIN FILMS;

ALUMINUM NITRIDE; ATOMIC COMPOSITION; DIFFUSION CONTROLLED GROWTH; DIRECTLY BONDED COMPOUND; MOLE FRACTIONS; TRIMETHYLALUMINUM AMMONIA ADDUCT;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 0029755308     PISSN: 09481907     EISSN: None     Source Type: Journal    
DOI: 10.1002/cvde.19960020102     Document Type: Article

References (0)