Physical and electrical properties of Zr-silicate dielectric layers deposited by atomic layer deposition

Electrochemical and Solid-State Letters

Volumn 6, Issue 7, 2003, Pages

  Rittersma, Z M ^a   Naburgh, E ^a   Dao, T ^a   Hendriks, A H C ^a   Besling, W F A ^a   Tois, E ^b   Vainonen Ahlgren, E ^b   Tuominen, M ^b   Haukka, S ^b  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

^b ASM Microchemistry Oy   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPOSITION; CRYSTALLIZATION; DEPOSITION; INTERFACES (MATERIALS);

ATOMIC LAYER DEPOSITION;

ZIRCONIUM COMPOUNDS;

EID: 0038167587     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1574652     Document Type: Article

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