Stress induced leakage current at low field in ultra thin oxides

Microelectronics Reliability

Volumn 41, Issue 9-10, 2001, Pages 1421-1425

  Lime, F ^a   Ghibaudo, G ^a   Guegan G ^b  

^a CNRS   (France)

^b CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRON TUNNELING; OXIDES; POLYSILICON; STRESS ANALYSIS;

STRESS INDUCED LEAKAGE CURRENT (SILC);

LEAKAGE CURRENTS;

EID: 0035456837     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(01)00169-X     Document Type: Article

References (8)

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3. Satake H. and Toriumi A., Proc. of Int. Conf. on Solid State Devices and Materials, Yokohama, Japan, 1994, p. 562.
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