Coverage analysis of a sulfur-terminated GaAs(001)-(2 × 6) surface: The effect of double sulfur-treatment

Surface Science

Volumn 402-404, Issue , 1998, Pages 669-672

  Shimoda, M ^a   Tsukamoto, S ^a   Koguchi, N ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

Auger electron spectroscopy; Coverage; Gallium arsenide; Photoelectron spectroscopy; Semiconducting surface

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; ELECTRON EMISSION; SCANNING TUNNELING MICROSCOPY; SULFUR; SURFACE TREATMENT; X RAY PHOTOELECTRON SPECTROSCOPY;

COVERAGE ANALYSIS; DOUBLE SULFUR TREATMENT;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031630008     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(97)00937-0     Document Type: Article

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