Electronic transport and structure of microcrystalline silicon deposited by the VHF-GD technique

Materials Research Society Symposium - Proceedings

Volumn 467, Issue , 1997, Pages 301-306

  Goerlitzer, M ^a   Beck, N ^a   Torres, P ^a   Kroll, U ^a   Keppner, H ^a   Meier, J ^a   Koehler, J ^a   Wyrsch, N ^a   Shah, A V ^a  

^a UNIVERSITY OF NEUCHÂTEL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CRYSTAL GROWTH; CRYSTAL ORIENTATION; CRYSTAL STRUCTURE; ELECTRON TRANSPORT PROPERTIES; HYDROGEN; INFRARED SPECTROSCOPY; SEMICONDUCTING SILICON; SILANES; X RAY DIFFRACTION;

DILUTION; ELECTRONIC TRANSPORT; LIGHT SOAKING; MICROCRYSTALLINE SILICON; STRETCHING MODE PEAK;

THIN FILMS;

EID: 0031360269     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-467-301     Document Type: Conference Paper

References (19)