Effect of ion mass and ion energy on low-temperature deposition of polycrystalline-Si thin film on SiO2 layer by using sputtering-type electron cyclotron resonance plasma

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 5 B, 2003, Pages

  Wang, Junli ^a   Saitou, Taishi ^a   Sugimoto, Youhei ^a   Wang, Dong ^a   Zhao, Liwei ^a   Nakashima, Hiroshi ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

Electron cyclotron resonance plasma; Ion mass; Polycrystalline; Substrate bias

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; ELECTRON CYCLOTRON RESONANCE; LOW TEMPERATURE PROPERTIES; SILICA; THIN FILMS;

ION MASS;

POLYCRYSTALLINE MATERIALS;

EID: 0038042473     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.l511     Document Type: Article

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