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Volumn 93, Issue 9, 2003, Pages 5833-5835

Characterization of traps related to InAs quantum-dot growth-induced defects in GaAs by low-frequency noise measurements in reverse-biased Schottky diodes

(5) Hastas, N A a Dimitriadis, C A a Dozsa, L b Gombia, E c Mosca, R c

a ARISTOTLE UNIVERSITY OF THESSALONIKI (Greece)

b RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE (Hungary)

c CNR (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; GOLD; LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS;

BARRIER HEIGHT;

SCHOTTKY BARRIER DIODES;

EID: 0037959985 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1564879 Document Type: Article

Times cited : (8)

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