Electronic characteristics of InAs/GaAs self-assembled quantum dots by deep level transient spectroscopy

Journal of Crystal Growth

Volumn 208, Issue 1, 2000, Pages 107-112

  Wang, H L ^a   Ning, D ^a   Zhu, H J ^a   Chen, F ^a   Wang, H ^a   Wang, X D ^a   Feng, S L ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; BAND STRUCTURE; DEEP LEVEL TRANSIENT SPECTROSCOPY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

INDIUM ARSENIDE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0033883359     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00441-8     Document Type: Article

References (21)

1. Goldstein L., Glas F., Marzin J.Y., Charasse M.N., Le Roux G. Appl. Phys. Lett. 47:1985;1099.
2. Arakawa Y., Salaki H. Appl. Phys. Lett. 46:1992;9551.
3. Cusack M.A., Briddon P.R., Jaros M. Phys. Rev. B. 54:1996;R2300.
4. Grundmann M., Ledentsov N.N., Stier O., Bimberg D., Ustinov V.M., Kop'ev P.S., Alferov Zh.I. Appl. Phys. Lett. 68:1996;979.
5. Brunkov P.N., Konnikov S., Ustinov V.M., Zhokov A.E., Egorov A.Yu., Maksimov M.V., Ledentsov N.N., Kop'ev P.S. Semiconductors. 30:1996;492.
6. Bimberg D., Ledentsov N.N., Grundmann M., Kirstaedter N., Schmidt O.G., Mao M.H., Ustinov V.M., Egorov A.Yu., Zhukov A.E., Kop'ev P.S., Alferov Zh.I., Ruvimov S.S., Gosele U., Heydenreich J. Jpn. J. Appl. Phys. 35:1996;1311.
7. Grundmann M., Stier O., Bimberg D. Phys. Rev. B. 52:1995;11969.
8. Marzin J.-Y., Bastard G. Solid State Commun. 92:1994;437.
9. Schmidt K.H., Mederiros-Ribeiro G., Oestreich M., Petroff P.M., Döhler G.H. Phys. Rev. B. 54:1996;11346.
10. Benisty H., Sotomayor Torres C.M., Weisbuch C. Phys. Rev. B. 44:1991;10945.
11. Inoshita T., Sakaki H. Phys. Rev. B. 46:1992;7260.
12. Bockelmann U., Egeler T. Phys. Rev. B. 46:1992;15574.
13. Fafard S., Leon R., Leonard D., Merz J.L., Petroff P.M. Phys. Rev. B. 52:1995;5752.
14. Chen Y., Washburn J. Phys. Rev. Lett. 77:1996;4046.
15. Xu Z.Y., Lu Z.D., Yang X.P., Yuan Z.L., Zheng B.Z., Xu J.Z. Phys. Rev. B. 54:1996;11528.
16. Ashoon R.C., Stormer H.L., Weiner J.S., Pfeiffer L.N., Baldwin K.W., West K.W. Phys. Rev. Lett. 71:1993;613.
17. Drexler H., Leonard D., Hansen W., Kotthaus J.P., Petroff P.M. Phys. Rev. Lett. 73:1994;2252.
18. Medeiros-Rebeiro G., Leonard D., Petroff P.M. Appl. Phys. Lett. 66:1995;1767.
19. Anand S., Carlsson N., Pistol M.-E., Samuelson L., Seifert W. Appl. Phys. Lett. 67:1996;3016.
20. Chen F., Feng S.L., Yang X.Z., Zhao Q., Wang Z.M., Wen L.S. Phys. Low-Dim. Struct. 11/12:1997;179.
21. Wang Z.M., Feng S.L., Yang X.P., Deng Y.M., Lu Z.D., Xu X.Y., Chen Z.G., Zheng H.Z., Han P.D., Wang F.L., Duan X.F. Phys. Low-Dim. Struct. 11/12:1997;213.