Growth and electrical characteristics of InAs/GaAs quantum well and quantum dot structures

Thin Solid Films

Volumn 367, Issue 1-2, 2000, Pages 89-92

  Horvath Zs J ^a,c   Dozsa L ^a   Van Tuyen, Vo ^a   Podor B ^a   Nemcsics, A ^a   Frigeri, P ^b   Gombia, E ^b   Mosca, R ^b   Franchi, S ^b  

^a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^b CNR   (Italy)

^c NONE   (Hungary)

Author keywords

Molecular beam epitaxy growth of embedded heterostructures; Quantum dots; Quantum wells

Indexed keywords

EID: 0002814636     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)00701-X     Document Type: Article

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