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Volumn 31, Issue 5, 2002, Pages 351-355

Interactions between intrinsic defects and nitrogen/boron impurities in high-resistivity 4H SiC: Electron paramagnetic resonance study

Author keywords

4H SiC; Boron; EPR; Impurities; Intrinsic defects; Nitrogen; Photo induced charge transfer

Indexed keywords

BORON; CHARGE TRANSFER; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; DOPING (ADDITIVES); NITROGEN; PARAMAGNETIC RESONANCE; PARAMAGNETISM; VANADIUM;

EID: 0036575573     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-002-0081-z     Document Type: Article
Times cited : (3)

References (18)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.