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Volumn 31, Issue 5, 2002, Pages 351-355
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Interactions between intrinsic defects and nitrogen/boron impurities in high-resistivity 4H SiC: Electron paramagnetic resonance study
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Author keywords
4H SiC; Boron; EPR; Impurities; Intrinsic defects; Nitrogen; Photo induced charge transfer
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Indexed keywords
BORON;
CHARGE TRANSFER;
CRYSTAL DEFECTS;
CRYSTAL IMPURITIES;
DOPING (ADDITIVES);
NITROGEN;
PARAMAGNETIC RESONANCE;
PARAMAGNETISM;
VANADIUM;
INTRINSIC DEFECTS;
SILICON CARBIDE;
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EID: 0036575573
PISSN: 03615235
EISSN: None
Source Type: Journal
DOI: 10.1007/s11664-002-0081-z Document Type: Article |
Times cited : (3)
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References (18)
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