Micropatterned vertically aligned carbon-nanotube growth on a Si surface or inside trenches

Applied Physics A: Materials Science and Processing

Volumn 74, Issue 2, 2002, Pages 287-290

  Sohn, Jung Inn ^a   Lee, Seonghoon ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; FIELD EMISSION DISPLAYS; LIGHT EMISSION; PHOTOLITHOGRAPHY; PULSED LASER DEPOSITION; REACTIVE ION ETCHING; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; STABILITY; STRENGTH OF MATERIALS; TENSILE STRENGTH;

CARBON NANOTUBE FABRICATION; LIFT OFF METHOD; MICROPATTERN; TRENCHES; VERTICALLY ALIGNED CARBON NANOTUBE GROWTH;

CARBON NANOTUBES;

EID: 0036477492     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390101016     Document Type: Article

References (16)