Controlling growth and field emission property of aligned carbon nanotubes on porous silicon substrates

Applied Physics Letters

Volumn 75, Issue 4, 1999, Pages 481-483

  Xu, Dongsheng ^a   Guo, Guolin ^a   Gui, Linlin ^a   Tang, Youqi ^a   Shi, Zujin ^b   Jin, Zhaoxia ^b   Gu, Zhennan ^b   Liu, Weimin ^b   Li, Xiulan ^b   Zhang, Guanghua ^b  

^a Institute of Physical Chemistry   (China)

^b PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CATALYSIS; CRYSTAL GROWTH; CURRENT DENSITY; DEPOSITION; ELECTRIC FIELD EFFECTS; GRAPHITIZATION; POROUS SILICON; PYROLYSIS; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY;

FOWLER-NORDHEIM PLOT;

NANOTUBES;

EID: 0032606327     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124415     Document Type: Article

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