Proposal of four-valued MRAM based on MTJ/RTD structure

Proceedings of The International Symposium on Multiple-Valued Logic

Volumn , Issue , 2003, Pages 273-278

  Uemura, Tetsuya ^a   Yamamoto, Masafumi ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COERCIVE FORCE; COMPUTER SIMULATION; FERROMAGNETIC MATERIALS; MAGNETIZATION; MAGNETORESISTANCE; RANDOM ACCESS STORAGE; RESONANT TUNNELING; TUNNEL JUNCTIONS;

CELL STRUCTURE; MAGNETIC RANDOM ACCESS MEMORY; MAGNETO TUNNEL JUNCTION; RESONANT TUNNELING DIODES; ULTRA HIGH DENSITY MEMORY;

MANY VALUED LOGICS;

EID: 0037819334     PISSN: 0195623X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)

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