Diffusion and electrical activation of indium in silicon

Journal of Applied Physics

Volumn 93, Issue 12, 2003, Pages 9773-9782

  Scalese, S ^a   Italia, M ^a   La Magna, A ^a   Mannino, G ^a   Privitera, V ^a   Bersani, M ^b   Giubertoni, D ^b   Barozzi, M ^b   Solmi, S ^c   Pichler, P ^d  

^a CNR IMM   (Italy)

^b ITC IRST   (Italy)

^c CNR   (Italy)

^d FRAUNHOFER INSTITUTE FOR INTEGRATED CIRCUITS IIS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ANALYSIS; ATOMS; DIFFUSION; MOSFET DEVICES; SILICON;

ELECTRICAL ACTIVATION;

INDIUM;

EID: 0037805623     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1572547     Document Type: Article

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