Investigation of indium activation by C-V measurement

Proceedings of the International Conference on Ion Implantation Technology

Volumn , Issue , 2000, Pages 66-69

  Liu, Jinning ^a   Jeong, Ukyo ^a   Mehta, Sandeep ^a   Sherbondy, Joe ^b   Lo, Andy ^c   Shim, Kyu Ha ^d   Lim, Jae Eun ^e  

^a VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES   (United States)

^b Solid State Measurements Inc   (United States)

^c Varian Taiwan Ltd   (Taiwan)

^d Varian Korea Ltd   (South Korea)

^e R and D Division   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION LEVEL; AVALANCHE BREAKDOWN; C-V MEASUREMENT; DOPING CONCENTRATION; HIGH-IONIZATION; IMPLANTED WAFERS; NITROGEN AMBIENT; SOLID SOLUBILITIES;

ACTIVATION ANALYSIS; ION IMPLANTATION; SILICON WAFERS; SOLUBILITY;

INDIUM;

EID: 70350291584     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2000.924091     Document Type: Conference Paper

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