Investigation on indium diffusion in silicon

Journal of Applied Physics

Volumn 92, Issue 3, 2002, Pages 1361-1366

  Solmi, S ^a   Parisini, A ^a   Bersani, M ^b   Giubertoni, D ^b   Soncini, V ^c   Carnevale, G ^c   Benvenuti, A ^c   Marmiroli, A ^c  

^a CNR   (Italy)

^b ITC IRST   (Italy)

^c STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION IN SILICON; DOPED SILICON; OUT-DIFFUSION; SECONDARY ION MASS SPECTROSCOPY; SEGREGATION COEFFICIENTS; SIMULATED PROFILE; TEMPERATURE RANGE; THIN OXIDE LAYERS; TRANSIENT ENHANCED DIFFUSION;

DOPING (ADDITIVES); INDIUM; SECONDARY ION MASS SPECTROMETRY; SILICON OXIDES; SIMULATED ANNEALING; TRANSMISSION ELECTRON MICROSCOPY;

DIFFUSION;

EID: 0036679085     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1492861     Document Type: Article

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