Nature of the 0.111-eV acceptor level in indium-doped silicon

Applied Physics Letters

Volumn 34, Issue 4, 1979, Pages 257-259

  Baron, R ^a   Baukus, J P ^a   Allen, S D ^a   McGill, T C ^a   Young, M H ^a   Kimura, H ^a   Winston, H V ^a   Marsh, O J ^a  

^a Hughes Aircraft Co   (United States)

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EID: 36749109428     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.90772     Document Type: Article

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