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Materials Research Society Symposium - Proceedings

Volumn 610, Issue , 2000, Pages

Diffusion engineering by carbon in silicon

(5) Goesele, U a Laveant, P a Scholz, R a Engler, N a Werner, P a

a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; OXYGEN; POINT DEFECTS; PRECIPITATION (CHEMICAL); SEMICONDUCTING SILICON; SOLUBILITY;

DIFFUSION ENGINEERING; DOPANTS; NONEQUILIBRIUM CONCENTRATIONS;

CARBON;

EID: 0034439945 PISSN: 02729172 EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (14)

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