Radiation effects in high speed III-V integrated circuits

International Journal of High Speed Electronics and Systems

Volumn 13, Issue 1, 2003, Pages 277-292

  Weatherford, Todd R ^a  

^a Naval Postgraduate School   (United States)

Author keywords

Compound semiconductors; Displacement damage; GaAs; GaN; InP; Radiation; SiC; Single event effects; Total dose

Indexed keywords

ENGINEERING RESEARCH; ERROR ANALYSIS; IONIZING RADIATION; LOGIC DESIGN; RADIATION EFFECTS; SEMICONDUCTING GALLIUM COMPOUNDS; SILICON CARBIDE;

DISPLACEMENT DAMAGE; SINGLE EVENT EFFECTS (SEE);

INTEGRATED CIRCUIT LAYOUT;

EID: 0037751729     PISSN: 01291564     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0129156403001612     Document Type: Article

References (55)

1. M. Simons, "Radiation effects in GaAs integrated circuits: A comparison with silicon", IEEE GaAs IC Symp, (1983) pp. 124-128.
2. D. Binder, E.C. Smith and A.B. Holman, "Satellite anomalies from galactic cosmic rays", IEEE Trans. on Nucl. Sci. NS-22, 6, (1975) pp. 2675-2680.
3. T.C. May and M.H. Woods, "Alpha-particle-induced soft errors in dynamic memories," Proceedings of the 1978 IEEE International Reliability Physics Symposium, (1978).
4. J.T. Wallmark, and S.M.Marcus, "Minimum size and maximum packing density of non-redundent semiconductor devices", Proc. of the IRE, 50, 3, (1962) pp. 286-298.
5. E. Normand, "Single-event effects in avionics", IEEE Trans. on Nucl. Sci., 43, 2, (1996) pg. 461-474.
6. M.W. Roberson, "Soft error rates in solder bumped packaging", Proceedings on the 4th International Symposium on Advanced Packaging Materials, 15-18 March 1998, Braselton, GA, USA.
7. P. Shapiro, A.B. Campbell, J.C. Ritter, R. Zuleeg, and J.K. Notthoff, 1983 IEEE Natural Space Radiation Effects Conference, Gatlinburg, TN, July 1983.
8. B.A. Kulp et al, "Electron radiation damage in unipolar transistor devices", Proc. IRE, 49, (1961) pp.1437-1438.
9. J.L. McNichols and W.S. Ginell, "Predicted effects of neutron irradiation on GaAs junction field effect transistors", IEEE Trans. on Nucl. Sci. NS-17, (1970) pp. 52-54.
10. J.M. Borrego et al., "Radiation effects on GaAs MESFETs", IEEE Trans. on Nucl Sci. NS-25 (1978), pp 1436-1443.
11. M. Simons et al, "Transient radiation study of GaAs MESFETs implanted in Cr-doped and undoped substrates", J. Appl. Phys., 52, (1981), pp.6630-6638.
12. R. Zuleeg and J.K. Notthoff, "Transient response of GaAs ICs to ionizing radiation", IEEE Trans. on Nucl. Sci., NS-26, (1979) pp. 4744-4749.
13. J.J.Wiczer, L.R. Dawson and C.E. Barnes, "Transient effects of ionizing radiation in photodiodes", IEEE Trans. on Nucl. Sci. NS-28, (1981), pp.4397-4402.
14. R. Zuleeg et al, "Latch-up in GaAs ICs during ionizing radiation exposure", 1982 GaAs IC Symposium Digest (1982), pp.123-126.
15. R. Zuleeg, J.K. Notthoff and D.K. Nichols, "SEU of Complementary GaAs static RAMs due to heavy ions", IEEE Trans. on Nucl. Sci. NS-30, (1984), pp. 4533-4539.
16. T.R. Weatherford, A.B.Campbell, D. McMorrow, J.B.Langworthy, W.J. Stapor, A.R.Knudson, E.L.Petersen, D. Wilson, and L. Tran, "Can Digital GaAs Be Used in a Space Environment?: A Look at Single Event Upset in GaAs", IEEE 1991 GaAs IC Symposium, Technical Digest, Monterey, California, October 20-23, 1991.
17. R. Schneiderwind, D. Krening, S. Buchner, K. Kang, T.R. Weatherford, "Laser confirmation of SEU experiments in GaAs MESFET combinational logic for space applications", IEEE Trans. on Nucl. Sci., NS-39 (1992), pp. 1665-1670.
18. R.J. Chaffin, "Microwave Semiconductor Fundamentals and Radiation Effects, John Wiley and Sons, New York (1973).
19. R. Zuleeg, "Radiation Effects in GaAs ICs", Chapter 8, VLSI electronics: microstructure science / edited by Norman G. Einspruch, 1985.
20. J.R.Srour and J.M. McGarrity, "Radiation Effects on Microelectronics in Space", Proceedings of the IEEE, 76-11, (1988), pp. 1443-1469.
21. R. Zuleeg, "Radiation effects in GaAs FET devices", Proceedings of the IEEE, 77-3, (1989), pp. 389-407.
22. R. Zuleeg, J.K. Notthoff, "SEU Hardening of GaAs E-JFET SRAMs", Journal of Radiation Effects, Research and Engineering, 6-2, (1988), pp. 136.
23. T.R. Weatherford, D. McMorrow, W.R. Curtice, A.R. Knudson and A.B. Campbell, "Single event induced charge transport modeling in GaAs MESFETs", IEEE Trans. on Nuclear Science, NS-40, (1993), pp. 1867-1871.
24. D. McMorrow, A.B. Campbell, A.R. Knudson, S. Buchner, T.R. Weatherford," Transient charge collection from ion tracks in semiconductors", Nuclear Instruments and Methods in Physics Research Section B, 67 n 1-4 (1992), pp 384.
25. B.W. Hughlock, G.S. LaRue, A.H. Johnston, "Single-event upset in GaAs E/D MESFET logic", IEEE Trans. on Nucl. Sci., 37-6, (1990), pp. 1894-1901.
26. D. McMorrow, T.R. Weatherford, S. Buchner, A.R. Knudson, J.S. Melinger, L.H. Tran, and A.B. Campbell, "Single-event phenomena in GaAs devices and circuits", IEEE Trans. on Nucl. Sci., NS-43, 2, (1996), pp. 628-644.
27. P.W. Marshall, C.J. Dale, T.R. Weatherford, M.Carts, D. McMorrow, A.Peczalski, S.Baier, J. Nohava and J. Skogen, "Heavy ion SEU immunity of a GaAs complementary HIGFET circuit fabricated on a low temperature grown buffer layer", IEEE Trans. on Nuclear Science, NS-42, (1995), pp. 1850-1855.
28. M. LaMacchia, J. Abrokwah, B.Bernhardt, D. Foster, B. Crawforth, B. Mathes, T. McGuire, and T. Weatherford, "Radiation hardened complementary GaAs (CGaAs™)", IEEE GaAs IC Symposium Technical Digest, October 1997.
29. A. Meulenberg, H.-L.A. Hung, K.E. Peterson, W.T. Anderson, "Total dose and transient radiation effects on GaAs MMICs", IEEE Trans. on Elec. Dev., 35-12, (1988), pp. 2125-2132.
30. R. Zuleeg, K. Lehovec and J.K. Notthoff, "Effects of total dose ionizing radiation on GaAs JFETs and ICs", IEEE GaAs IC Symposium Digest, (1981) pp. 14.
31. J.M. Borrego et al., "Radiation Effects on signal and noise characteristics of GaAs MESFET microwave amplifiers", IEEE Trans. on Nucl. Sci. NS-26 (1979), pp 5092-5099.
32. M. Citterio, S. Rescia, and V. Radeka, "Radiation effects at cryogenic temperatures in Si-JFET, GaAs MESFET, and MOSFET devices", IEEE Tran. On Nucl Sci. NS-42, (1995) pp. 2266-2270.
33. T.R. Weatherford, "Single event upset in GaAs integrated circuits", PhD thesis, North Carolina State University, 1993.
34. J.L.Andrews, J.E. Schroeder, B.L. Gingerich, W.A. Kolasinski, R. Koga and S.E. Diehl, "Single event error immune CMOS SRAM", IEEE Trans. on Nucl. Sci. NS-29 (1982), pp. 2040-2043.
35. J.R. Hauser, "SEU-hardened silicon bipolar and GaAs MESFET SRAM cells using local redundancy techniques", IEEE Trans. on Nucl. Sci. NS-39, (1992), pp. 2-6.
36. R.L. Remke et al, "SEU measurements on HFETs and HFET SRAMs", IEEE Trans. on Nucl. Sci. NS-36, (1989) pp.2362-2366.
37. C.A.Klein, "Bandgap dependance and related features of radiation ionization energies in Semiconductors", Journal of Applied Physics, vol. 39, no. 4, pp. 2029-2038, March 1968.
38. T.R. Weatherford, "From carriers to contacts, A review of SEE charge collection processes", IEEE 2002 Natural Space Radiation Effect Conference Short Course notes, July 2002.
39. T.R. Weatherford, J.R. Hauser, and S.E. Diehl, "Comparisons of single event vulnerability of GaAs SRAMs", IEEE Trans. on Nucl. Sci., NS-33, (1986), pg. 1121-1127.
40. A.B. Campbell et al, "Charge collection studies in CMOS/SOS structures", IEEE Trans. on Nucl. Sci. NS-32, (1985) pp 4128-4132.
41. S.E. Kerns, L.W. Massengill, D.V. Kerns Jr., M.L. Alles, T.W. Houston, H. Lu and L.R. Hite, "Model for CMOS/SOI single-event vulnerability", IEEE Trans. on Nucl. Sci., NS-36, (1989) pp. 2305-2310.
42. T.R. Weatherford, L. Tran, W.J. Stapor, E.L. Petersen, J.B. Langworthy, D. McMorrow, W.G. Abdel-Kader, and P.J. McNulty, "Proton and heavy ion upsets in GaAs MESFET devices", IEEE Trans. on Nucl. Sci., NS-38, (1991), pp. 1450-1456.
43. T.R. Weatherford, D. McMorrow, W.R. Curtice and A.B. Campbell, "Significant reduction in the soft error susceptibility of GaAs field-effect transistors with a low-temperature grown GaAs buffer layer", Applied Physics Letters, 67, 5, 31 July 1995, pg. 703-705.
44. F. W. Smith, A. R. Calawa, and C. L. Chen, "New MBE buffer used to eliminate backgating in GaAs MESFETs," IEEE Elec. Dev. Let., 9-2, (1988) pp. 77-80.
45. T.R. Weatherford, P.W. Marshall, C.J. Marshall, D.J. Fouts, B. Mathes and M. LaMacchia, "Effects of low-temperature buffer-layer thickness and growth temperature on the SEE sensitivity of GaAs HIGFET Circuits", IEEE Trans. on Nucl. Sci., NS-45, (1997), pp. 2298-2305.
46. C.J. Marshall, P.W. Marshall, M.A. Carts, R. Reed, S.Baier, and K. Label, "Characterization of transient error cross sections in high speed commercial fiber optic data links", IEEE 2001 Radiation Effects Data Workshop, pg. 142-145.
47. G. David, T. Yun, M. Crites, J.F. Whitaker, T.R. Weatherford, K. Jobe, S. Meyer, M. Bustamante, W. Goyette, S. Thomas III, and K. Elliott, "Absolute potential measurements inside microwave digital ICs using a micromachined photconductive sampling probe", IEEE Trans. on Microwave Theory and Techniques, 46-12, (1998), pp. 2330-2337.
48. M. Shoga, K. Jobe, M. Glasgow, M. Bustamante, E. Smith and R. Koga, "Single event upset at gigahertz frequencies", IEEE Trans. on Nucl. Sci., NS-41, (1994), pp. 2252-2258.
49. R.A. Reed, M.A.Carts, P.W.Marshall, C.J. Marshall, S. Buchner, M. La Macchia, B. Mathes, D. McMorrow, "Single event upset cross sections at various data rates", IEEE Trans. on Nucl. Sci. NS-43, (1996), pp. 2862-2867.
50. T.R.Weatherford, J. Whitaker, K. Jobe, S. Meyer, M. Bustamante, S.Thomas III, and K. Elliott, "Single event induced voltage transients within InP HBT circuits", Journal of Radiation Effects, September 2001.
51. T.R.Weatherford and P.K. Schiefelbein, "SEE Analysis of digital InP-Based HBT circuits at gigahertz frequencies", IEEE Trans. on Nucl. Sci., NS-48, (2001), pp. 1980-1986.
52. R.C. Baumann, T. Hossain, S. Murata, H. Kitagawa, "Boron compounds as a dominant source of alpha particles in semiconductor devices", Proceedings of the 33rd Annual IEEE International Reliability Physics Symposium, (1995), pp. 297-302.
53. R.C. Baumann, "Soft errors in advanced semiconductor devices-part I: the three radiation sources", IEEE Transactions on Device and Materials Reliability, 1-1, (2001) pp. 17-22.
54. th Annual Device Research Conference Digest, (1996), pp. 134-135.
55. nd Symposium On Non-Stoichiometric III-V Compounds, Physik Mikrostrukturierter Halbleiter 23, Friedrich-Alexander-Universitat 2000, pg. 7-12.