Epitaxial growth of 4H-SiC (0 3 3̄ 8) and control of MOS interface

Applied Surface Science

Volumn 216, Issue 1-4 SPEC., 2003, Pages 497-501

  Kimoto, T ^a   Hirao, T ^a   Fujihira, K ^a   Kosugi, H ^a   Danno, K ^a   Matsunami, H ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

Channel mobility; Dislocation; Epitaxy; MOS interface; Silicon carbide; Wide bandgap semiconductor

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DISLOCATIONS (CRYSTALS); DOPING (ADDITIVES); EPITAXIAL GROWTH; INTERFACES (MATERIALS); MOS DEVICES;

EPILAYERS;

SILICON CARBIDE;

EID: 0037732890     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00457-4     Document Type: Conference Paper

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