A study of indium nitride films grown under conditions resulting in apparent band-gaps from 0.7 eV to 2.3 eV

Materials Research Society Symposium - Proceedings

Volumn 743, Issue , 2002, Pages 707-712

  Butcher, K S A ^a   Wintrebert Fouquet, M ^a   Motlan, ^b   Shrestha, S K ^c   Timmers, H ^c,d   Prince, K E ^e   Tansley, T L ^a  

^a MACQUARIE UNIVERSITY   (Australia)

^b UNIVERSITAS NEGERI MEDAN   (Indonesia)

^c UNIVERSITY OF NEW SOUTH WALES   (Australia)

^d AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^e AUSTRALIAN NUCLEAR SCIENCE AND TECHNOLOGY ORGANISATION   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY MEASUREMENT (OPTICAL); ENERGY GAP; NITRIDES; PHOTOIONIZATION; POLYCRYSTALLINE MATERIALS; SECONDARY ION MASS SPECTROMETRY; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

BAND GAPS; HEAVY ION ELASTIC RECOIL DETECTION ANALYSIS; INDIUM NITRIDE; POLYCRYSTALLINE INDIUM NITRIDE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0037695937     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-743-l11.23     Document Type: Conference Paper

References (19)

1. T. L. Tansley and C. P. Foley, Electron Lett. 20, 1066 (1984).
2. T. L. Tansley and C. P. Foley, J. Appl. Phys. 59, 3241 (1986).
3. J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager III, E. E. Haller, H. Lu, W. J. Schaff, Y. Saito and Y. Nanishi, Appl. Phys. Lett. 80, 3967 (2002).
4. V. Yu Davydov, A. A. Klochikhin, V. V. Emtsev, S. V. Ivanov, V. V. Vekshin, F. Bechstedt, J. Furthmuller, H. Harima, A. V. Mudryi, A. Hashimoto, A. Yamamoto, J. Aderhold, J. Graul and E. E. Haller, Phys. Stat. Sol. B, 230, R4 (2002).
5. T. Inushima, V. V. Mamutin, V. A. Vekshin, S. V. Ivanov, T. Sakon, M. Motokawa and S. Ohoya, J. Crystal Growth, 227-228, 481 (2001).
6. Private communication with W. J. Schaff of Cornell University.
7. H. Lu, W. J. Schaff, J. Hwang, H. Wu, Wesley Yeo, A. Pharkya and L. F. Eastman, Appl. Phys. Lett., 77, 2548 (2000).
8. V. Yu Davydov work presented, International Workshop on Nitride Semiconductors, Aachen Germany July 2002.
9. K. S. A. Butcher, H. Timmers, Afifuddin, P. P.-T. Chen, T. D. M. Weijers, E. M. Goldys, T. L. Tansley, R. G. Elliman and J. A. Freitas Jr., J. Appl. Phys. 92, 3397 (2002).
10. K. S. A. Butcher, H. Dou, E. M. Goldys, T. L. Tansley and S. Srikeaw, Accepted for publication Phys. Stat. Sol. B.
11. K. S. A. Butcher, M. Wintrebert-Fouquet, P. P.-T. Chen, T. L. Tansley, S. Srikeaw, S. K. Shrestha, R.G. Elliman, and Heiko Timmers, Accepted for publication in the Australian Institute of Physics 2002 Biennial Congress Proceedings. Also detailed in a recent submission to Appl. Phys. Lett.
12. Y. Gao, Surf. Interface Anal., 14, 552 (1989).
13. S. Kumar, L. Mo, Motlan and T. L. Tansley, Jpn J. Appl. Phys., 35, 2261 (1996).
14. V. V. Mamutin, T. V. Shubina, V. A. Vekshin, V. V. Ratnikov, A. A. Toropov, S. V. Ivanov, M. Karlsteen, U. Sodervall and M. Willander, Appl. Surf. Sci., 166, 87 (2000).
15. H. Timmers, T. D. M. Weijers, R. G. Elliman, Nucl. Instr. Meth. B, 190, 393 (2002).
16. S. M. Size, Physics of Semiconductor Devices, second edition, (John Wiley, New York, 1981) pp. 39-41.
17. T. L. Tansley, R. J. Egan and E. C. Horrigan, Thin Solid Films, 164, 441 (1988).
18. J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager III, E. E. Haller, H. Lu and W. J. Schaff, Appl. Phys. Lett., 80, 4741 (2002).
19. T. L. Tansley and C. P. Foley, J. Appl. Phys., 60, 2092 (1986).