Deep submicrometer SOI MOSFET drain current model including series resistance, self-heating and velocity overshoot effects

IEEE Electron Device Letters

Volumn 21, Issue 5, 2000, Pages 239-241

  Roldan J B ^a   Gamiz F ^a   Lopez Villanueva J A ^a   Cartujo Cassinello, P ^a  

^a UNIVERSITY OF GRANADA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; MATHEMATICAL MODELS; SEMICONDUCTING FILMS; THRESHOLD VOLTAGE;

BACK OXIDE CAPACITANCE; DRAIN CURRENT MODEL; VELOCITY OVERSHOOT EFFECT;

MOSFET DEVICES;

EID: 0342918655     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.841308     Document Type: Article

References (11)

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