Improvement in the crystallinity and electrical properties in Hg1-xCdxTe epilayers utilizing CdTe buffer layers grown on GaAs substrates by a two-step annealing process

Journal of Materials Research

Volumn 18, Issue 2, 2003, Pages 257-261

  Ryu, Y S ^a   Song, B S ^a   Kim, H J ^a   Kang, T W ^a   Kim, T W ^b  

^a Dongguk University   (South Korea)

^b Kwangwoon University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CADMIUM COMPOUNDS; GROWTH (MATERIALS); HIGH ENERGY ELECTRON DIFFRACTION; INFRARED DETECTORS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES;

EPILAYERS;

MERCURY COMPOUNDS;

EID: 0037662055     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.2003.0036     Document Type: Article

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