The effect of hydrogenation in HgxCd1-xTe thin films grown on p-CdTe (211) B substrates

Applied Surface Science

Volumn 120, Issue 3-4, 1997, Pages 287-290

  Man, M S ^a   Kang, T W ^a   Kim, M D ^b   Jeoung, Y T ^c   Kim, H K ^c   Kim, J M ^c   Woo, H J ^d   Kim, T W ^e  

^a Dongguk University   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^c Agency for Defence Development   (South Korea)

^d Korea Research Institute of Standards and Science   (South Korea)

^e Kwangwoon University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRON ENERGY LEVELS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HALL EFFECT; HYDROGEN; HYDROGENATION; MERCURY COMPOUNDS; MOLECULAR BEAM EPITAXY; OPACITY; PASSIVATION; SEMICONDUCTING CADMIUM COMPOUNDS;

CADMIUM TELLURIDE; CARRIER MOBILITY; MERCURY CADMIUM TELLURIDE; NUCLEAR RESONANCE REACTION;

SEMICONDUCTING FILMS;

EID: 0031342856     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0169-4332(97)00244-4     Document Type: Article

References (13)

1. S.J. Pearton, J.W. Corbett, T.S. Shi, Appl. Phys. A 43 (1987) 153.
2. R. Mostefaoui, J. Chevallier, A. Jalil, J.C. Pesant, C.W. Tu, R.F. Kopf, J. Appl. Phys. 64 (1988) 207.
3. N. Pan, B. Lee, S.S. Bose, M.H. Kim, J.S. Hughes, G.E. Stillman, K. Arai, Y. Nashimoto, Appl. Phys. Lett. 50 (1987) 1832.
4. W.C. Dautremont-Smith, J.C. Nabity, V. Swaminathan, M. Stavola, J. Chevallier, C.W. Tu, S.J. Pearton, Appl. Phys. Lett. 49 (1986) 1098.
5. Y. Nishibayashi, Y. Tokumitsu, T. Imura, Y. Osaka, Jpn. J. Appl. Phys. Phys. 28 (1989) 1917.
6. Y.F. Chen, C.S. Tsai, Y.H. Chang, Y.M. Chang, Appl. Phys. Lett. 58 (1991) 493.
7. A. Jalil, J. Chevallier, R. Azulay, R. Mircea, J. Appl. Phys. 59 (1986) 3774.
8. Y.F. Chen, W.S. Chen, Appl. Phys. Lett. 58 (1991) 703.
9. W.A. Rudolph, C. Bauer, K. Brankoff, D. Grambole, R. Grotzschel, C. Heiser, F. Herrmann, Nucl. Instr. Meth. B 15 (1986) 508.
10. J.A. Mroczkowsky, D.A. Nelson, R. Murosako, P.H. Zimmermann, J. Vac. Sci. Technol. A 1 (1983) 1756.
11. J. Wang, W. Lu, J. Liu, Z. Yu, D. Tang, Appl. Phys. Lett. 57 (1990) 363.
12. J. Blair, R. Newnham, Metallurgy of Elemental and Compound Semiconductors, vol. 12, Wiley, New York, 1961, p. 393.
13. Y.S. Kim, J.K. Kim, W. Hong, D.K. Kim, S.Y. Cho, H.J. Woo, N.B. Kim, J. Korean Vac. Soc. 2 (1993) 416.