Structural, electrical, and optical property studies of indium-doped Hg0.8Cd0.2Te/Cd0.96Zn0.04Te heterostructures

Journal of Materials Research

Volumn 14, Issue 7, 1999, Pages 2778-2782

  Han, M S ^a   Kang, T W ^a   Kim, T W ^b  

^a Dongguk University   (South Korea)

^b Kwangwoon University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HALL EFFECT; INDIUM; MERCURY COMPOUNDS; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTOR DOPING; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY;

BURSTEIN-MOSS EFFECT; VAN DER PAUW HALL EFFECT;

HETEROJUNCTIONS;

EID: 0032630872     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.1999.0371     Document Type: Article

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