Behavior of oxidation-induced stacking faults in annealed Czochraiski silicon doped by nitrogen

Journal of Applied Physics

Volumn 93, Issue 11, 2003, Pages 8926-8929

  Yang, Deren ^a   Chu, Jia ^a   Xu, Jin ^a   Que, Duanlin ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); NITROGEN; OXIDATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; TRANSMISSION ELECTRON MICROSCOPY;

INTERSTITIAL SITES;

CRYSTAL GROWTH FROM MELT;

EID: 0037636430     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1569978     Document Type: Article

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