Preparation of wide-gap hydrogenated amorphous silicon carbide thin films by hot-wire chemical vapor deposition at a low tungsten temperature

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 1 A/B, 2003, Pages

  Tabata, Akimori ^a   Nakajima, Takayuki ^a   Mizutani, Teruyoshi ^a   Suzuoki, Yasuo ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

Amorphous; Hot wire CVD; Infrared absorption; Silicon carbide; Wide gap

Indexed keywords

AMORPHOUS MATERIALS; CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; ENERGY GAP; HYDROGEN; HYDROGENATION; LIGHT ABSORPTION; METHANE; SILANES; SILICON CARBIDE; TEMPERATURE; TUNGSTEN;

HOT WIRE CHEMICAL VAPOR DEPOSITION; INFRARED ABSORPTION; OPTICAL BAND GAP; TUNGSTEN TEMPERATURE; WIDE GAP AMORPHOUS SILICON CARBIDE;

THIN FILMS;

EID: 0037628608     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.l10     Document Type: Letter

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