Optical properties of bias-induced CH4-H2 plasma for diamond film deposition

Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

Volumn 20, Issue 3, 2002, Pages 941-944

  Zhu, X D ^a   Zhan, R J ^a   Zhou, H Y ^a   Wen, X H ^a   Li, D ^a  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL ACTIVATION; CHEMICAL REACTORS; CHEMICAL VAPOR DEPOSITION; DIAMOND FILMS; ELECTRON ENERGY LEVELS; FILM GROWTH; HYDROGEN; INFRARED SPECTROSCOPY; LIGHT ABSORPTION; METHANE; OPTICAL PROPERTIES; THERMAL EFFECTS;

ELECTRON IMPACT; HOT FILAMENT CHEMICAL VAPOR DEPOSITION REACTOR; INFRARED ABSORPTION SPECTROSCOPY; OPTICAL EMISSION; OPTICAL EMISSION SPECTROSCOPY; THERMAL ACTIVATION STATE;

PLASMAS;

EID: 0036565328     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1474420     Document Type: Article

References (14)