Rate-limiting process and growth kinetics of AlN thin films by microwave plasma CVD with AlBr3-NH3-N2 system

Thin Solid Films

Volumn 334, Issue 1-2, 1998, Pages 145-150

  Meng, G Y ^a   Xie, S ^a   Peng, O K ^a  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

Aluminum nitride; CVD; Microwave plasma

Indexed keywords

ACTIVATION ENERGY; ALUMINUM COMPOUNDS; FILM GROWTH; FILM PREPARATION; MATHEMATICAL MODELS; MICROWAVES; MORPHOLOGY; PLASMA APPLICATIONS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; THERMAL EFFECTS; THIN FILMS;

ALUMINUM NITRIDE; MICROWAVE PLASMAS;

SEMICONDUCTING FILMS;

EID: 0032483874     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01133-X     Document Type: Article

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