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Journal of Electronic Materials

Volumn 30, Issue 11, 2001, Pages 1412-1416

In-situ monitoring, structural, and optical properties of ultrathin GaSb/GaAs quantum wells grown by OMVPE

(5) Pitts, O J a Watkins, S P a Wang, C X a Stotz, J A H a Thewalt, M L W a

a SIMON FRASER UNIVERSITY (Canada)

Author keywords

Antimonides; GaAs; GaSb; In situ monitoring; Monolayers; Quantum wells; RDS; Reflectance anisotropy; Segregation

Indexed keywords

ANISOTROPY; CRYSTAL GROWTH; INTERFACES (MATERIALS); METALLORGANIC VAPOR PHASE EPITAXY; MONOLAYERS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; REFLECTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SURFACE STRUCTURE; X RAY DIFFRACTION ANALYSIS;

REFLECTANCE ANISOTROPY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0035516637 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-001-0193-x Document Type: Article

Times cited : (12)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.