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Microelectronics Journal

Volumn 32, Issue 7, 2001, Pages 593-598

Structural parameters governing properties of GaInSb/InAs infra-red detectors

(4) Shaw, M J a Corbin, E A a Kitchin, M R a Jaros, M a

a NEWCASTLE UNIVERSITY (United Kingdom)

Author keywords

Absorption; Defects; Heterostructures; Infra red detectors; Scattering

Indexed keywords

COMPUTATIONAL METHODS; INFRARED DETECTORS; LIGHT ABSORPTION; LIGHT SCATTERING; POTENTIAL ENERGY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN RATE;

PSEUDOPOTENTIAL METHOD; WAVE-FUNCTION ENGINEERING;

HETEROJUNCTIONS;

EID: 0035400465 PISSN: 00262692 EISSN: None Source Type: Journal
DOI: 10.1016/S0026-2692(01)00029-5 Document Type: Article

Times cited : (9)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.