Optical characterization of surfaces during epitaxial growth using RDS and GIXS

Journal of Crystal Growth

Volumn 163, Issue 1-2, 1996, Pages 67-77

  Kamiya, I ^a,f,g   Mantese, L ^b   Aspnes, D E ^b   Kisker, D W ^c   Fuoss, P H ^d   Stephenson, G B ^c   Brennan, S ^e  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b NORTH CAROLINA STATE UNIVERSITY   (United States)

^c IBM T J WATSON RESEARCH CENTER   (United States)

^d LUCENT TECHNOLOGIES   (United States)

^e SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

^f JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^g UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; CRYSTAL ATOMIC STRUCTURE; CRYSTAL SYMMETRY; EMISSION SPECTROSCOPY; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; X RAY CRYSTALLOGRAPHY;

ATOMIC ARRANGEMENT; GRAZING INCIDENCE X RAY SCATTERING; OPTICAL CHARACTERIZATION; ORGANOMETALLIC; OSCILLATION PERIODS; REFLECTANCE DIFFERENCE SPECTROSCOPY; SURFACE RECONSTRUCTIONS; ULTRAHIGH VACUUM;

SURFACE STRUCTURE;

EID: 0030563410     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)01051-3     Document Type: Article

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