Structure of the B/Si(100) surface at low boron coverage studied by scanning tunnelling microscopy

Applied Surface Science

Volumn 103, Issue 4, 1996, Pages 443-449

  Kulakov, M A ^a   Zhang, Z ^a   Zotov, A V ^a,b   Bullemer, B ^a   Eisele, I ^a  

^a BUNDESWEHR UNIVERSITY MUNICH   (Germany)

^b RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BORON; CRYSTAL ATOMIC STRUCTURE; HIGH TEMPERATURE EFFECTS; INTERFACES (MATERIALS); LOW ENERGY ELECTRON DIFFRACTION; MODELS; SCANNING TUNNELING MICROSCOPY; SILICON; SURFACES;

HIGH TEMPERATURE ANNEALING;

SURFACE STRUCTURE;

EID: 0030412980     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00542-9     Document Type: Article

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