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Volumn 16, Issue 4, 2001, Pages 276-280
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Methods for determining deep defect concentration from dependence of excess carrier density and lifetime on illumination intensity
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Author keywords
[No Author keywords available]
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Indexed keywords
BAND STRUCTURE;
BORON;
CRYSTAL DEFECTS;
ELECTRON TRAPS;
HOLE TRAPS;
LIGHTING;
RADIATION EFFECTS;
SATURATION (MATERIALS COMPOSITION);
SEMICONDUCTING SILICON;
SEMICONDUCTOR DOPING;
SPECTROSCOPIC ANALYSIS;
AUGER RECOMBINATION;
BAND-TO-BAND RECOMBINATION;
DEEP DEFECT CONCENTRATION;
ILLUMINATION INTENSITY;
INJECTION LEVEL SPECTROSCOPY;
RADIATION-INDUCED DEEP DEFECTS;
SHOCKLEY-READ-HALL RECOMBINATION THEORY;
CARRIER CONCENTRATION;
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EID: 0035309923
PISSN: 02681242
EISSN: None
Source Type: Journal
DOI: 10.1088/0268-1242/16/4/316 Document Type: Article |
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Times cited : (6)
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References (9)
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