Tunneling-assisted thermalization and recombination of nonequilibrium carriers in localized states: Application to the frequency-resolved drift mobility in amorphous silicon

Physical Review B - Condensed Matter and Materials Physics

Volumn 64, Issue 12, 2001, Pages

  Hattori, K ^a   Hirao, T ^a   Musa, Y ^a   Okamoto, H ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON DIOXIDE;

AQUEOUS SOLUTION; ARTICLE; CHEMICAL INTERACTION; MOLECULAR DYNAMICS; PHYSICAL CHEMISTRY; SEMICONDUCTOR; THEORY; THERMODYNAMICS;

EID: 0035883627     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.64.125208     Document Type: Article

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