Anomalous electrochemical behavior of N-type GaN films on α-Al2O3 substrates

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 4 B, 1999, Pages 2619-2621

  Yamamoto, Akio ^a   Tsuji, Yasuyuki ^a   Sugiura, Toshimitsu ^a   Hashimoto, Akihiro ^a  

^a UNIVERSITY OF FUKUI   (Japan)

Author keywords

Anodic behavior; GaN; Inhomogeneity; Peeling; Selective etching; Ultraviolet light irradiation

Indexed keywords

EID: 0013298391     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.2619     Document Type: Article

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