Anomalous x-ray diffraction on InAs/GaAs quantum dot systems

Applied Physics Letters

Volumn 81, Issue 3, 2002, Pages 448-450

  Schulli T U ^a   Sztucki, M ^a   Chamard, V ^a   Metzger, T H ^a   Schuh, D ^b  

^a EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

^b WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANOMALOUS DIFFRACTION; ANOMALOUS X-RAY DIFFRACTION; GAAS SUBSTRATES; GAAS(001); GRAZING INCIDENCE X-RAY DIFFRACTION; HETEROEPITAXIAL; INAS QUANTUM DOTS; INAS/GAAS; RELATIVE INTENSITY; SUBSTRATE MATERIAL; WETTING LAYER; X-RAY ENERGIES;

EPITAXIAL GROWTH; GALLIUM ARSENIDE; INDIUM ARSENIDE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM DOTS; SUBSTRATES; X RAY DIFFRACTION;

X RAY DIFFRACTION ANALYSIS;

EID: 79956010782     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1491293     Document Type: Article

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