Passivation of GaAs(110) with Ga 2O 3 thin films deposited by electron cyclotron resonance plasma reactive molecular beam epitaxy

Journal of Applied Physics

Volumn 92, Issue 5, 2002, Pages 2330-2334

  Kim, D ^a   Chen, G ^a   Mei, X Y ^a   Ruda, H E ^a  

^a UNIVERSITY OF TORONTO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC OXIDE; BONDING CONFIGURATIONS; ELECTRON CYCLOTRON RESONANCE PLASMA; GAAS; GALLIUM OXIDES; HYDROGEN PASSIVATION; LOW TEMPERATURE PHOTOLUMINESCENCE; P-TYPE WAFER; PHOTOLUMINESCENCE ENHANCEMENT; RELATED COMPOUNDS; ROOM TEMPERATURE PHOTOLUMINESCENCE SPECTRA; SECONDARY ION MASS SPECTROSCOPY; SEMI-INSULATING; SENSITIVITY LIMIT;

ARSENIC; CARBON; ELECTRON CYCLOTRON RESONANCE; EPITAXIAL GROWTH; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; PASSIVATION; PHOTOELECTRONS; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM; THIN FILMS; VAPOR DEPOSITION; WAFER BONDING; X RAY PHOTOELECTRON SPECTROSCOPY;

GALLIUM ARSENIDE;

EID: 0036734006     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1497455     Document Type: Article

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