GaAs and InP nanohole arrays fabricated by reactive beam etching using highly ordered alumina membranes

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 2 B, 1999, Pages 1052-1055

  Nakao, Masashi ^a   Oku, Satoshi ^a   Tamamura, Toshiaki ^a   Yasui, Kenshi ^b   Masuda, Hideki ^b  

^a NTT CORPORATION   (Japan)

^b TOKYO METROPOLITAN UNIVERSITY   (Japan)

Author keywords

2 D photonic crystal; GaAs; Hole array; InP; Porous alumina membrane; RBE mask

Indexed keywords

ALUMINA; ASPECT RATIO; CRYSTALS; DRY ETCHING; MASKS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

ALUMINA MASK; NANOHOLE ARRAYS; PHOTONIC CRYSTAL; REACTIVE BEAM ETCHING;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0032631774     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.1052     Document Type: Article

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