Molecular beam epitaxial growth of ordered GaAs nanodot arrays using anodic alumina masks

MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy

Volumn , Issue , 2002, Pages 313-314

  Mei, Xiangyang ^a   Blumin, M ^a   Kim, D ^a   Wu, Zhanghua ^a   Ruda, H E ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ELECTRON BEAM LITHOGRAPHY; EPITAXIAL GROWTH; GALLIUM ARSENIDE; LITHOGRAPHY; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM DOTS;

BROAD SIZE DISTRIBUTION; FABRICATION METHOD; LATTICE-MATCHED HETEROSTRUCTURES; MOLECULAR BEAM EPITAXIAL GROWTH; NANOCHANNEL ALUMINAS; PROXIMITY EFFECTS; SELF-ASSEMBLED GROWTH; STATE OF THE ART;

MOLECULAR BEAMS;

EID: 84968531351     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MBE.2002.1037885     Document Type: Conference Paper

References (3)

1. H. Masuda and K. Fukuda, Science, 268, 1466(1995).
2. X. Mei and H. Ruda, "Proc. Int. Sym. of Young Scholars on Mechanics and Material Engineering for Science and Experiments", Changsha/Zhangjiajie, Hunan, China; Science Press, p.60, 2001.
3. X. Mei, D. Kim, H. E. Ruda and Q. X. Guo, 80 (23), (2002), to be published