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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 2 B, 1999, Pages 1075-1077

InAs-Dot/GaAs structures site-controlled by in situ electron-beam lithography and self-organizing molecular beam epitaxy growth

(3) Kohmoto, Shigeni a Ishikawa, Tomonori a Asakawa, Kiyoshi a

a WASEDA UNIVERSITY (Japan)

Author keywords

In situ electron beam lithography; InAs quantum dot; MBE; Self organization; Site control

Indexed keywords

ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; ELECTRON BEAM LITHOGRAPHY; EPITAXIAL GROWTH; ETCHING; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

IN SITU PATTERN FORMATION TECHNIQUE; ULTRAHIGH VACUUM MULTICHAMBER SYSTEM;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032654643 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.38.1075 Document Type: Article

Times cited : (17)

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