Pt Schottky contacts to n-(Ga,Mn)N

Applied Physics Letters

Volumn 81, Issue 4, 2002, Pages 658-660

  Kim, Jihyun ^a   Ren, F ^a   Thaler, G T ^a   Overberg, M E ^a   Abernathy, C R ^a   Pearton, S J ^a   Wilson, R G ^b  

^a University of Florida   (United States)

^b Consultant ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; CURRENT-VOLTAGE MEASUREMENTS; REVERSE CURRENTS; ROOM TEMPERATURE; SATURATION CURRENT DENSITIES; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY CONTACTS;

ACTIVATION ENERGY; GALLIUM NITRIDE; PLATINUM; SCHOTTKY BARRIER DIODES; THERMIONIC EMISSION;

MANGANESE;

EID: 79955992518     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1496130     Document Type: Article

References (20)

1. T. Dietl, H. Ohno, F. Matsukura, J. Cibert, and D. Ferrand, Science 287, 1019 (2000). sci SCIEAS 0036-8075
2. T. Szyszko, G. Kamler, B. Strojek, G. Weisbrod, S. Podliasko, L. Adamowicz, W. Gebicki, J. Szczytko, A. Twardowski, and K. Sikorski, J. Cryst. Growth 233, 631 (2001). jcr JCRGAE 0022-0248
3. M. Zajac, J. Gosk, M. Kaminska, A. Twardowski, T. Szyszko, and S. Podliasko, Appl. Phys. Lett. 79, 2432 (2001). apl APPLAB 0003-6951
4. M. Zajac, R. Doradzinski, J. Gosk, J. Szczytko, M. Lefeld-Sosnowska, M. Kaminska, A. Twardowski, M. Palczewska, E. Grzanka, and W. Gebicki, Appl. Phys. Lett. 78, 1276 (2001). apl APPLAB 0003-6951
5. W. Gebicki, J. Strzeszewski, G. Kamler, T. Szyszko, and S. Podliasko, Appl. Phys. Lett. 76, 3870 (2000). apl APPLAB 0003-6951
6. M. L. Reed, M. K. Ritums, H. H. Stadelmaier, M. J. Reed, C. A. Parker, S. M. Bedair, and N. A. El-Masry, Mater. Lett. 51, 500 (2001). mal MLETDJ 0167-577X
7. M. L. Reed, N. A. El-Masry, H. H. Stadelmaier, M. K. Ritums, M. J. Reed, C. A. Parker, J. C. Roberts, and S. M. Bedair, Appl. Phys. Lett. 79, 3473 (2001). apl APPLAB 0003-6951
8. G. T. Thaler, M. E. Overberg, B. P. Gila, R. Frazier, C. R. Abernathy, S. J. Pearton, J. S. Lee, S. M. Lee, Y. D. Park, Z. G. Khim, J. Kim, and F. Ren (unpublished).
9. N. Theodoropoulou, A. F. Hebard, S. N. G. Chu, M. E. Overberg, C. R. Abernathy, S. J. Pearton, R. G. Wilson, and J. M. Zavada, Appl. Phys. Lett. 79, 3452 (2001). apl APPLAB 0003-6951
10. R. Y. Korotiev, J. M. Gregie, and B. W. Wessels, Appl. Phys. Lett. 80, 1731 (2002). apl APPLAB 0003-6951
11. For a review of defects and impurities in GaN see S. J. Pearton, J. C. Zolper, R. J. Shul, and F. Ren, J. Appl. Phys. 86, 1 (1999); jap JAPIAU 0021-8979
12. H. Morkoç, Nitride Semiconductors and Devices (Springer, Berlin, 1999);
13. H. Morkoç, Mater. Sci. Eng., R. 33, 135 (2001). msr MIGIEA 0927-796X
14. H. Ohno, D. Chiba, F. Matsukura, T. Omiya, E. Abe, T. Dietl, Y. Ohno, and K. Ohtani, Nature (London) 408, 944 (2000). nat NATUAS 0028-0836
15. S. A. Wolf, D. D. Awschalom, R. A. Buhrman, J. M. Daughton, S. von Molnar, M. L. Roukes, A. Y. Chtchelkanova, and D. M. Treger, Science 294, 1488 (2001). sci SCIEAS 0036-8075
16. A. C. Schmitz, A. T. Ping, M. Asif Khan, Q. Chen, J. W. Yang, and I. Adesida, J. Electron. Mater. 27, 255 (1998). jem JECMA5 0361-5235
17. A. S. Barker, Jr. and M. Ilegems, Phys. Rev. B 7, 743 (1973). prq PLRBAQ 0556-2805
18. For review of rectifying properties of metal contacts in GaN, see, for example, Q. Z. Liu and S. S. Lau, Solid-State Electron. 42, 677 (1998); sel SSELA5 0038-1101
19. A. G. Baca, J. C. Zolper, R. D. Briggs, and F. Ren, Thin Solid Films 308, 549 (1997). tsf THSFAP 0040-6090
20. D. K. Schroder, Semiconductor Material and Device Characterization (Wiley, New York, 1990).