-
1
-
-
0001689904
-
The thermal conductivity of ceramic dielectrics
-
ed. J. E. Burke, Pergamon Press, New York
-
Kingery, W. D., The thermal conductivity of ceramic dielectrics. In Progress in Ceramic Science, Vol. 2, ed. J. E. Burke. PergamonPress, New York, 1962, pp. 182-235.
-
(1962)
Progress in Ceramic Science
, vol.2
, pp. 182-235
-
-
Kingery, W.D.1
-
2
-
-
0029754710
-
Effect of grain growth on the thermal conductivity of silicon nitride
-
Hirosaki, N., Okamoto, Y., Ando, M., Munakata, F. and Akiume, Y., Effect of grain growth on the thermal conductivity of silicon nitride. J. Ceram. Soc. Jpn, 1996, 104(1), 49-53.
-
(1996)
J. Ceram. Soc. Jpn
, vol.104
, Issue.1
, pp. 49-53
-
-
Hirosaki, N.1
Okamoto, Y.2
Ando, M.3
Munakata, F.4
Akiume, Y.5
-
3
-
-
0030241956
-
High thermal conductivity in silicon nitride with anisotropic microstructure
-
Hirao, K., Watari, K., Brito, M. E., Toriyama, M. and Kanzaki, S., High thermal conductivity in silicon nitride with anisotropic microstructure. J. Am. Ceram. Soc., 1996, 79(9), 2485-2488.
-
(1996)
J. Am. Ceram. Soc.
, vol.79
, Issue.9
, pp. 2485-2488
-
-
Hirao, K.1
Watari, K.2
Brito, M.E.3
Toriyama, M.4
Kanzaki, S.5
-
4
-
-
0032629590
-
Hot isostatic pressing to increase thermal conductivity of silicon nitride ceramics
-
Watari, K., Hirao, K., Brito, M. E., Toriyama, M. and Kanzaki, S., Hot isostatic pressing to increase thermal conductivity of silicon nitride ceramics. J. Mater. Res., 1999, 14(4), 1538-1541.
-
(1999)
J. Mater. Res.
, vol.14
, Issue.4
, pp. 1538-1541
-
-
Watari, K.1
Hirao, K.2
Brito, M.E.3
Toriyama, M.4
Kanzaki, S.5
-
5
-
-
84992247819
-
4
-
4. J. Ceram. Soc. Jpn, 2000, 83(8), 1985-1992.
-
(2000)
J. Ceram. Soc. Jpn
, vol.83
, Issue.8
, pp. 1985-1992
-
-
Akiume, Y.1
Munakata, F.2
Matsuo, K.3
Okamoto, Y.4
Hirosaki, N.5
Satoh, C.6
-
6
-
-
0032662579
-
Effect of grain size on the thermal conductivity of silicon nitride
-
Watari, K., Hirao, K., Brito, M. E., Toriyama, M. and Ishizaki, K., Effect of grain size on the thermal conductivity of silicon nitride. J. Am. Ceram. Soc., 1999, 82(3), 777-779.
-
(1999)
J. Am. Ceram. Soc.
, vol.82
, Issue.3
, pp. 777-779
-
-
Watari, K.1
Hirao, K.2
Brito, M.E.3
Toriyama, M.4
Ishizaki, K.5
-
7
-
-
0030291420
-
Thermal conductivity of gas-pressure-sintered silicon nitride
-
Hirosaki, N., Okamoto, Y., Ando, M., Munakata, F. and Akiume, Y., Thermal conductivity of gas-pressure-sintered silicon nitride. J. Am. Ceram. Soc., 1996, 79(11), 2878-2882.
-
(1996)
J. Am. Ceram. Soc.
, vol.79
, Issue.11
, pp. 2878-2882
-
-
Hirosaki, N.1
Okamoto, Y.2
Ando, M.3
Munakata, F.4
Akiume, Y.5
-
8
-
-
0034247829
-
4. Part II, effect of lattice oxygen
-
4. Part II, effect of lattice oxygen. J. Am. Ceram. Soc., 2000, 83(8), 1985-1992.
-
(2000)
J. Am. Ceram. Soc.
, vol.83
, Issue.8
, pp. 1985-1992
-
-
Kitayama, M.1
Hirao, K.2
Tsuge, A.3
Watari, K.4
Toriyama, M.5
Kanzaki, S.6
-
9
-
-
0035790139
-
2 addition as a means of increasing the thermal conductivity of β-silicon nitride
-
2 addition as a means of increasing the thermal conductivity of β-silicon nitride. J. Am. Ceram. Soc., 2000, 84(12), 3060-3062.
-
(2000)
J. Am. Ceram. Soc.
, vol.84
, Issue.12
, pp. 3060-3062
-
-
Hayashi, H.1
Hirao, K.2
Toriyama, M.3
Kanzaki, S.4
-
10
-
-
0035698629
-
Effect of oxygen content on thermal conductivity of sintered silicon nitride
-
Hayashi, H., Hirao, K., Kitayama, M., Yamamazaki, Y. and Kanzaki, S., Effect of oxygen content on thermal conductivity of sintered silicon nitride. J. Ceram. Soc. Jpn, 2001, 109(12), 1046-1050.
-
(2001)
J. Ceram. Soc. Jpn
, vol.109
, Issue.12
, pp. 1046-1050
-
-
Hayashi, H.1
Hirao, K.2
Kitayama, M.3
Yamamazaki, Y.4
Kanzaki, S.5
-
11
-
-
0000173115
-
4 prepared by gas pressure sintering
-
ed. S. Hirano, G. L. Messing, and N. Claussen, American Ceramic Society, Westerville, OH
-
4 prepared by gas pressure sintering. In Ceramic Transactions, Vol 112, Ceramic Processing Science IV, 7th International Ceramic Processing Science Meeting 2000, 611-616. S. Hirano, G. L. Messing, and N. Claussen, American Ceramic Society, Westerville, OH, 2001, pp. 611-616.
-
(2001)
Ceramic Transactions, Ceramic Processing Science IV, 7th International Ceramic Processing Science Meeting 2000
, vol.112
, pp. 611-616
-
-
Yokota, H.1
Ibukiyama, M.2
-
13
-
-
0024754723
-
Microstructural changes in β-silicon nitride grains upon crystallizing the grain-boundary glass
-
Lee, W. E. and Hilans, G. E., Microstructural changes in β-silicon nitride grains upon crystallizing the grain-boundary glass. J. Am. Ceram. Soc., 1989, 72(10), 1931-1937.
-
(1989)
J. Am. Ceram. Soc.
, vol.72
, Issue.10
, pp. 1931-1937
-
-
Lee, W.E.1
Hilans, G.E.2
-
14
-
-
0030263211
-
Review silicon nitride crystal structure and observations of lattice defects
-
Wang, C. M., Pan, X., Rühle, M., Riley, F. L. and Mitomo, M., Review silicon nitride crystal structure and observations of lattice defects. J. Mater. Sci., 1996, 31, 5281-5298.
-
(1996)
J. Mater. Sci.
, vol.31
, pp. 5281-5298
-
-
Wang, C.M.1
Pan, X.2
Rühle, M.3
Riley, F.L.4
Mitomo, M.5
-
15
-
-
0031245187
-
Annealing effects for structural defects of silicon nitride ceramics
-
Munakata, F., Sato, C., Hirosaki, N., Tanimura, M., Akiume, Y., Okamoto, Y. and Inoue, Y., Annealing effects for structural defects of silicon nitride ceramics. J. Ceram. Soc. Jpn, 1997, 105(10), 5281-5298.
-
(1997)
J. Ceram. Soc. Jpn
, vol.105
, Issue.10
, pp. 5281-5298
-
-
Munakata, F.1
Sato, C.2
Hirosaki, N.3
Tanimura, M.4
Akiume, Y.5
Okamoto, Y.6
Inoue, Y.7
-
16
-
-
0035437574
-
Microstructure in silicon nitride containing β-phase seeding: III, grain growth and coalescence
-
Lu, H. H. and Huang, J. L., Microstructure in silicon nitride containing β-phase seeding: III, grain growth and coalescence. J. Am. Ceram. Soc., 2001, 84(8), 1891-1895.
-
(2001)
J. Am. Ceram. Soc.
, vol.84
, Issue.8
, pp. 1891-1895
-
-
Lu, H.H.1
Huang, J.L.2
-
17
-
-
0032045421
-
3 additive
-
3 additive. J. Ceram. Soc. Jpn, 1998, 106(4), 441-443.
-
(1998)
J. Ceram. Soc. Jpn
, vol.106
, Issue.4
, pp. 441-443
-
-
Munakata, F.1
Sato, C.2
Hirosaki, N.3
Tanimura, M.4
Akiume, Y.5
Inoue, Y.6
-
20
-
-
0033224884
-
4. Part I, effects of various microstructural factors
-
4. Part I, effects of various microstructural factors. J. Am. Ceram. Soc., 1999, 82(11), 3105-3112.
-
(1999)
J. Am. Ceram. Soc.
, vol.82
, Issue.11
, pp. 3105-3112
-
-
Kitayama, M.1
Hirao, K.2
Toriyama, M.3
Kanzaki, S.4
-
21
-
-
0035250225
-
4: III, effect of rare-earth (RE=La, Nd, Gd, Y, Yb, and Sc) oxide additives
-
4: III, effect of rare-earth (RE=La, Nd, Gd, Y, Yb, and Sc) oxide additives. J. Am. Ceram. Soc., 2001, 84(2), 353-358.
-
(2001)
J. Am. Ceram. Soc.
, vol.84
, Issue.2
, pp. 353-358
-
-
Kitayama, M.1
Hirao, K.2
Watari, K.3
Toriyama, M.4
Kanzaki, S.5
-
22
-
-
0027641611
-
Statistical analysis of the intergranular film thickness in silicon nitride ceramics
-
Kleebe, H. J., Cinibulk, M. K., Cannon, R. M. and Rühle, M., Statistical analysis of the intergranular film thickness in silicon nitride ceramics. J. Am. Ceram. Soc., 1993, 76(8), 1969-1977.
-
(1993)
J. Am. Ceram. Soc.
, vol.76
, Issue.8
, pp. 1969-1977
-
-
Kleebe, H.J.1
Cinibulk, M.K.2
Cannon, R.M.3
Rühle, M.4
-
23
-
-
0031169945
-
Transient growth bands in silicon nitride cooled in rare-earth-based glass
-
Wang, C. M., Pan, X., Gu, H., Duscher, G., Hoffmann, M. J., Cannon, R. M. and Rühle, M., Transient growth bands in silicon nitride cooled in rare-earth-based glass. J. Am. Ceram. Soc., 1997, 80(6), 1397-1404.
-
(1997)
J. Am. Ceram. Soc.
, vol.80
, Issue.6
, pp. 1397-1404
-
-
Wang, C.M.1
Pan, X.2
Gu, H.3
Duscher, G.4
Hoffmann, M.J.5
Cannon, R.M.6
Rühle, M.7
-
24
-
-
0032670653
-
-
Hirosaki, N., Saito, T., Munakata, F., Tanimura, M., Akiume, Y. and Ikuhara, Y., J. Mater. Res., 1999, 14(7), 2959-2965.
-
(1999)
J. Mater. Res.
, vol.14
, Issue.7
, pp. 2959-2965
-
-
Hirosaki, N.1
Saito, T.2
Munakata, F.3
Tanimura, M.4
Akiume, Y.5
Ikuhara, Y.6
|