Thermal conductivity of β-Si3N4: II, Effect of lattice oxygen

Journal of the American Ceramic Society

Volumn 83, Issue 8, 2000, Pages 1985-1992

  Kitayama, Mikito ^a,c,d   Hirao, Kiyoshi ^b,c   Tsuge, Akira ^b   Watari, Koji ^b,c   Toriyama, Motohiro ^b   Kanzaki, Shuzo ^b,c  

^a Fine Ceramics Research Association   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c AMERICAN CERAMIC SOCIETY   (United States)

^d FUKUOKA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL LATTICES; CRYSTAL MICROSTRUCTURE; DENSITY (SPECIFIC GRAVITY); EXTRACTION; GRAIN BOUNDARIES; HOT PRESSING; OXYGEN; SILICA; SINTERING; THERMAL CONDUCTIVITY OF SOLIDS; YTTRIUM COMPOUNDS;

HOT-GAS EXTRACTION;

SILICON NITRIDE;

EID: 0034247829     PISSN: 00027820     EISSN: None     Source Type: None    
DOI: 10.1111/j.1151-2916.2000.tb01501.x     Document Type: Article

References (16)

1. 4: I, Effects of Various Microstructural Factors," J. Am. Ceram. Soc., 82 [11] 3105-12 (1999).
2. 4," J. Am. Ceram. Soc., 82 [3] 777-79 (1999).
3. G. A. Slack, "Nonmetallic Crystals with High Thermal Conductivity," J. Phys. Chem. Solids, 34, 321-35 (1973).
4. G. A. Slack, R. A. Tanzilli, R. O. Pohl, and J. W. Vandersande, "The Intrinsic Thermal Conductivity of AlN," J. Phys. Chem. Solids, 48 [7] 641-47 (1987).
5. A. V. Virkar, T. B. Jackson, and R. A. Cutler, "Thermodynamic and Kinetic Effects of Oxygen Removal on the Thermal Conductivity of Aluminum Nitride," J. Am. Ceram. Soc., 72 [1] 2031-42 (1989).
6. 3) Ceramics," J. Am. Ceram. Soc., 74 [4] 718-23 (1991).
7. T. B. Jackson, A. V. Virkar, K. L. More, R. B. Dinwiddie Jr., and R. A. Cutler, "High-Thermal-Conductivity Aluminum Nitride Ceramics: The Effect of Thermodynamic, Kinetic, and Microstructural Factors," J. Am. Ceram. Soc., 80 [6] 1421-35 (1997).
8. C.-M. Wang, X. Pan, M. Rühle, F. L. Riley, and M. Mitomo, "Review: Silicon Nitride Crystal Structure and Observations of Lattice Defects," J. Mater. Sci., 31, 5281-98 (1996).
9. 4 Crystal Lattice," J. Am. Ceram. Soc., 82 [11] 3263-65 (1999).
10. A. Thomas and G. Müller, "Determination of the Concentration of Oxygen Dissolved in the AlN Lattice by Hot Gas Extraction from AlN Ceramics," J. Eur. Ceram. Soc., 8, 11-19 (1991).
11. S. Nakahata, K. Sogabe, T. Matsuura, and A. Yamakawa, "Electron Spin Resonance Analysis of Lattice Defects in Polycrystalline Aluminum Nitride," J. Am. Ceram. Soc., 80 [6] 1612-14 (1997).
12. 4 Interfaces," Phys. Rev. B: Condens. Matter, 52 [12] 8904-20 (1995).
13. M. Okazaki and K. Toriyama: unpublished work (1999).
14. 3 Ratio," J. Ceram. Soc. Jpn., 107 [10] 930-34 (1999).
15. D. R. Clarke and G. Thomas, "Grain Boundary Phases in Hot-Pressed MgO Fluxed Silicon Nitride," J. Am. Ceram. Soc., 60 [11-12] 491-95 (1977).
16. W. E. Lee and G. E. Hilmas, "Microstructural Changes in β-Silicon Nitride Grains upon Crystallizing the Grain-Boundary Glass," J. Am. Ceram. Soc., 72 [10] 1931-37 (1989).