High thermal conductivity in silicon nitride with anisotropic microstructure

Journal of the American Ceramic Society

Volumn 79, Issue 9, 1996, Pages 2485-2488

  Hirao, Kiyoshi ^a,b   Watari, Koji ^a,b   Brito, Manuel E ^a,b   Toriyama, Motohiro ^a   Kanzaki, Shuzo ^a,b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b AMERICAN CERAMIC SOCIETY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CASTING; CRYSTAL MICROSTRUCTURE; CRYSTAL ORIENTATION; HOT PRESSING; MIXTURES; SINGLE CRYSTALS; THERMAL CONDUCTIVITY; YTTRIUM COMPOUNDS;

GRAIN ALIGNMENT; TAPE CASTING; TAPE STACKING;

SILICON NITRIDE;

EID: 0030241956     PISSN: 00027820     EISSN: None     Source Type: Journal    
DOI: 10.1111/j.1151-2916.1996.tb09002.x     Document Type: Article

References (20)

1. 4 with Fiber-like Structure," Am. Ceram. Soc. Bull., 65 [9] 1311-15 (1986).
2. C. W. Li and J. Yamanis, "Super-Tough Silicon Nitride with R-Curve Behavior," Ceram. Eng. Sci. Proc., 10 [7-8] 632-45 (1989).
3. P. F. Becher, "Microstructural Design of Toughened Ceramics," J. Am. Ceram. Soc., 74 [2] 255-69 (1991).
4. M. N. Menon, H. T. Fang, D. C. Wu, M. G. Jenkins, M. K. Ferber, K. L. More, C. R. Hubbard, and T. A. Nolan, "Creep and Stress Rupture Behavior of an Advanced Silicon Nitride: Part I - Part III," J. Am. Ceram, Soc., 77 [5] 1217-41 (1994).
5. 4 by the Laser Flash Method," Am. Ceram. Soc. Bull., 57 [12] 1119-22 (1978).
6. G. Ziegler and D. P. Hasselman, "Effect of Phase Composition and Microstructure on the Thermal Diffusivity of Silicon Nitride," J. Mater. Sci., 16, 495-503 (1981).
7. 4 with and without Additives," Am. Ceram. Soc. Bull., 60 [9] 910-12 (1981).
8. K. Watari, Y. Seki, and K. Ishizaki, "Thermal Properties of HIP Sintered Silicon Nitride," J. Ceram. Soc. Jpn., 97 [1] 56-62 (1989).
9. A. J. Moulson, "Review - Reaction-Bonded Silicon Nitride: Its Formation and Properties," J. Mater. Sci., 14, 1017-51 (1979).
10. 4," J. Ceram. Soc. Jpn., 94 [6] 595-600 (1986).
11. 4," Am. Ceram. Soc. Bull., 57 [12] 1126-30 (1978).
12. 4 Ceramics through Improved Processing," Ceram. Eng. Sci. Proc., 16 [4] 475-87 (1995).
13. C. W. Li, J. Yamanis, P. J. Whalen, C. J. Gasdaska, and C. P. Ballard, "Properties of In Situ Reinforced Silicon Nitride Ceramics"; pp. 103-11 in Gas Pressure Effects on Materials Processing and Design. Edited by K. Ishizaki, E. Hodge, and M. Concannon. Materials Research Society, Pittsburgh, PA, 1992.
14. N. Hirosaki, Nissan Motor Co., Ltd. Yokosuka, Japan; private communication.
15. K. Hirao, M. Ohashi, M. E. Brito, and S. Kanzaki, "Processing Strategy for Producing Highly Anisotropie Silicon Nitride," J. Am. Ceram. Soc., 78 [6] 1687-90 (1995).
16. 4 Single Crystal Particles," J. Ceram. Soc. Jpn., 101 [9] 1071-73 (1993).
17. Y. Takahashi and M. Murabayashi, "Measurement of Thermal Properties of Nuclear Materials by Laser Flash Method," J. Nucl. Sci. Technol., 12 [3] 13-44 (1975).
18. W. D. Kingery, "The Thermal Conductivity of Ceramic Dielectrics"; pp. 182-235 in Progress in Ceramic Science, Vol. 2. Edited by J. E. Burke. Pergamon Press, New York, 1962.
19. C. M. B. Henderson and D. Taylor, "Thermal Expansion of the Nitrides and Oxynitride of Silicon in Relation to Their Structures," Trans. Br. Ceram. Soc., 74, 49-53 (1975).
20. M. E. Brito, K. Hirao, K. Watari, M. Toriyama, and S. Kanzaki; unpublished work.