Photoreflectance studies of optical transitions in cubic GaN grown on GaAs(0 0 1) substrates

Journal of Crystal Growth

Volumn 252, Issue 1-3, 2003, Pages 208-212

  Noriega, O C ^a   Tabata, A ^b   Soares, J A N T ^a   Rodrigues, S C P ^a   Leite, J R ^a   Ribeiro, E ^c   Fernandez, J R L ^c   Meneses, E A ^c   Cerdeira, F ^c   As, D J ^d   Schikora, D ^d   Lischka, K ^d  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

^b SÃO PAULO STATE UNIVERSITY UNESP   (Brazil)

^c UNIVERSITY OF CAMPINAS   (Brazil)

^d UNIVERSITY OF PADERBORN   (Germany)

Author keywords

A1. Photoluminescence; A1. Photoreflectance; A3. Molecular beam epitaxy; B1. GaN

Indexed keywords

BINDING ENERGY; ENERGY GAP; GALLIUM NITRIDE; PHOTOLUMINESCENCE; PLASMA SOURCES; REFLECTION; SUBSTRATES;

OPTICAL TRANSITIONS;

MOLECULAR BEAM EPITAXY;

EID: 0037401633     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02517-4     Document Type: Article

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