The effect of epitaxial growth on warp of SiC wafers

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 235-238

  Nakayama, K ^a   Miyanagi, Y ^a   Maruyama, K ^a   Okamoto, Y ^a   Shiomi, H ^a   Nishino, S ^b  

^a SiXON Ltd   (Japan)

^b KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

4H SiC; CVD; Epitaxy; Hydrogen etching; Warp

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; ETCHING; SILICON CARBIDE;

4H-SIC; EPITAXIAL WAFERS; HYDROGEN ETCHING; SI FACES; SURFACE PROFILES; WARP;

SILICON WAFERS;

EID: 4243506407     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028hnnwscientific.net/MSF.389-393.235     Document Type: Conference Paper

References (2)

1. H. Tsuchida, I. Kamata, T. Jikimoto and K. Izumi, Materials Science Forum Vols. 338-342 (2000) pp. 145
2. K. Nakayama, Y. Miyanagi, H. Shiomi and S. Nishino, Abstracts of The 13th International Conference on Crystal Growth (Kyoto, Japan, 2001) pp. 13