Epitaxial growth of 4H SiC in a vertical hot-wall CVD reactor: Comparison between up- and down-flow orientations

Journal of Crystal Growth

Volumn 241, Issue 4, 2002, Pages 421-430

  Zhang, J ^a   Ellison, A ^b   Danielsson, O ^a   Linnarsson, M K ^c   Henry, A ^a   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b Okmetic AB   (Sweden)

^c ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

A1. Growth models; A1. Heat transfer; A1. Mass transfer; A3. Chemical vapor deposition processes; B2. Semiconducting materials

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; DOPING (ADDITIVES); HEAT TRANSFER; MASS TRANSFER; MORPHOLOGY; SEMICONDUCTING SILICON COMPOUNDS;

HOT-WALL REACTORS;

EPITAXIAL GROWTH;

EID: 0036609630     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)00882-5     Document Type: Article

References (27)