Dry etching and metallization schemes in a GaN/SiC heterojunction device process

Materials Science Forum

Volumn 338, Issue , 2000, Pages

  Danielsson, E ^a   Zetterling, C M ^a   Ostling M ^a   Lee, S K ^a   Linthicum, K J ^b   Thomson, D B ^b   Nam, O H ^b   Davis, R F ^b  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHLORINE; DRY ETCHING; ELECTRIC CONTACTS; FLUORINE; METALLIZING; NITRIDES; PLASMA ETCHING; REACTIVE ION ETCHING; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SPUTTER DEPOSITION;

ETCH SELECTIVITY; GALLIUM NITRIDE;

HETEROJUNCTIONS;

EID: 18844466598     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (19)

1. J. T. Torvik, C. Qiu, M. Leksono and J. I. Pankove, Appl. Phys. Lett. 72 (1998), p. 945.
2. E. Danielsson et al., Mat. Sci. Engineering B61-62 (1999), p. 320.
3. E. Danielsson, B. Breitholtz, C.-M. Zetterling and M. Östling, Physica Scripta T79 (1999), p. 290.
4. C. B. Vartuli et al., J. Appl. Phys. 80 (1996), p. 3705.
5. I. Adesida et al., Appl. Phys. Lett. 63 (1993), p. 2777.
6. N. Medelci et al., Mat. Res. Soc. Symp. Proc. 512 (1998), p. 285.
7. R. J. Shul et al., Appl. Phys. Lett. 66 (1995), p. 1761.
8. J. R. Mileham et al., Appl. Phys. Lett. 67 (1995), p. 1119.
9. R. J. Shul et al., Mat. Res. Soc. Symp. Proc. 512 (1998), p. 487.
10. P. Leerungnawarat, H. Cho, S. J. Pearton, C.-M. Zetterling and M. Östling, Subm. to J. Electron. Mater. (1999)
11. L. Cao, B. Li and J. H. Zhao, Journal of Electrochemical Society 145 (1998), p. 3609.
12. F. Lanois et al., J. Electron. Mater. 28 (1999), p. 219.
13. J. Hong et al., J. Electron. Mater. 28 (1999), p. 196.
14. J. J. Wang et al., J. Vac. Sci. Tech. A 16 (1998), p. 2204.
15. P. Leerungnawarat et al., J. Vac. Sci. Tech. B 17 (1999), p. 2050.
16. J. Crofton, P. G. McMullin, J. R. Williams and M. J. Bozack, J. Appl. Phys. 77 (1995), p. 1317.
17. J. Crofton et al., Solid-State Electron. 41 (1997), p. 1725.
18. L. M. Porter and R. F. Davis, Mat. Sci. Engineering B34 (1995), p. 83.
19. E. Danielsson, C. I. Harris, C.-M. Zetterling and M. Östling, Mat. Sci. Forum 264-268 (1998), p. 805.